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| 2SK2828 Silicon N Channel MOS FET High Speed Power Switching 2nd. Edition August 1996 Features * * * * * * Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Avalanche ratings Outline TO-3P D 2 1 G 1 3 S 2 3 1. Gate 2. Drain (Flange) 3. Source 2SK2828 Absolute Maximum Ratings (Ta = 25C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Symbol VDSS VGSS ID ID(pulse)*1 Ratings 700 30 12 48 12 12 7.8 175 150 -55 to +150 Unit V V A A A A mJ W C C Body-drain diode reverse drain current IDR Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Note: IAP*3 EAR*3 Pch*2 Tch Tstg 1. PW 10s, duty cycle 1 % 2. Value at Tc = 25C 3. Value at Tch = 25C, Rg 50 , L = 100 H 2SK2828 Electrical Characteristics (Ta = 25C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltege drain current Symbol Min Typ -- -- -- -- -- 0.9 9.0 1850 400 45 35 8 10 25 65 140 55 0.95 Max -- -- 10 100 3.0 1.2 -- -- -- -- -- -- -- -- -- -- -- -- Unit V V A A V S pF pF pF nc nc nc ns ns ns ns V s IF = 12A, VGS = 0 Test Conditions ID = 10mA, VGS = 0 IG = 100 A, VDS = 0 VGS = 25V, VDS = 0 VDS = 560 V, VGS = 0 ID = 1mA, VDS = 10V ID = 6A, VGS = 10V*1 ID = 6A, VDS = 10V*1 VDS = 10V VGS = 0 f = 1MHz VDD = 400V VGS = 10V ID = 12A ID = 6A, RL = 5 VGS = 10V V(BR)DSS 700 V(BR)GSS 30 IGSS IDSS -- -- 2.0 -- 5.5 -- -- -- -- -- -- -- -- -- -- -- Gate to source cutoff voltage VGS(off) Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance RDS(on) |yfs| Ciss Coss Reverse transfer capacitance Crss Total gate charge Gate to source charge Gate to drain charge Turn-on delay time Rise time Turn-off delay time Fall time Body-drain diode forward voltage Body-drain diode reverse recovery time Note: 1. Pulse test trr Qg Qgs Qgd td(on) tr td(off) tf VDF -- 2.5 -- IF = 12A, VGS = 0 diF/ dt =100A/s 2SK2828 Main Characteristics Power vs. Temperature Derating 200 Pch (W) Channel Dissipation 150 100 50 0 50 100 150 Ta (C) 200 Ambient Temperature 2SK2828 Package Dimentions Unit: mm 3.2 0.2 0.5 typ 16.0 max 5.0 0.3 5.0 max 1.5 typ 1.0 typ 14.9 0.2 2.0 typ 20.1 max 1.6 typ 1.4 max 2.0 typ 18.0 0.5 2.8 typ 1.0 0.2 3.6 typ 0.9 typ 1.0 typ 0.6 0.2 0.3 typ 5.45 0.2 5.45 0.2 Hitachi Code EIAJ JEDEC TO-3P SC-65 -- |
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